Rumors and leaks are increasing as the release date of Samsung Galaxy S9 and S9 Plus is getting closer and closer every day. We have many great designs leaked one after another. However, today, we have the leaked Samsung Galaxy S9 / S9 Plus Exynos 9810 Geekbench Score.
Let us clear that like the previous series, this generation will also have two variants with different SoCs, one with Snapdragon 845 (China and US) and one with Exynos 9810 (Overseas).
Samsung Galaxy S9 / S9 Plus – The Rumored Specs
Appearance wise, we will see a little bit different but the overall shaped will be mentioned. Samsung Galaxy S8 / S8 + border width will be further compressed to achieve 90% screen-to-body ratio.
Galaxy S9 and Galaxy S9 Plus will integrate a 5.8-inch and a 6.2-inch Full-screen display, respectively. The heart of the flagship will be Snapdragon 845 (China and US version) and Exynos 9810 (Overseas version). The starting variant for Samsung Galaxy S9 will be:
- 4G +64 GB, 3000mAh battery
And for Galaxy S9 Plus will be:
- 6 +64 GB start, 3500mAh battery
Both variants will feature fast charge (still said to be QC2.0 15W fast charge). The back dual camera is 12 MP + 12MP, supporting F1.5 / 2.4 aperture, and instead of the under-display fingerprint reader, we have the rear fingerprint reader.
Samsung Galaxy S9 / S9 Plus Exynos 9810 Geekbench Score
Today’s Geekbench exposure of the S9 / S9 + was with the Exynos 9810 processor. The results were simply incredible. Samsung S9 having:
- A single-core score of 3648 points
- A multi-core score of 8894 points
Samsung S9 plus having:
- A single-core score of 3773 points
- A multi-core score of 9024 points
In Geekbench’s latest score list, the S8 (Exynos 8895) scored an average of 1,950 (single-core) and 6400 (multi-core). Meanwhile, the S8 + (Exynos 8895) scored 2,159 (single-core) and 7235 (multi-core). In comparison to Exynos 8895, Exynos 9810 SoC performance improvement that comes with this particular benchmark is simply staggering. Isn’t it?
Previously, Samsung Galaxy S9 Snapdragon 845 (Chinese version) was leaked on AnTuTu as well. Along with the configuration of SD 845 + 6GB RAM, the phone reached 265,267 points. On the same AnTuTu 7.0 version, Samsung S8 Snapdragon 835 achieved 210,000 points, so we have an overall increase of 26%.
Looks like Snapdragon 845 will beat Apple A11 SoC with a lead of 20,000 to 30,000 points. Let’s hope the Samsung Galaxy S9 / S9 Plus Exynos 9810 Geekbench Score is real. We will find that soon on February 25 at MWC 18.